PART |
Description |
Maker |
MJL4302A MJL4281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors 15 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-264AA From old datasheet system POWER TRANSISTOR, NPN 350V Audio Transistor, PNP 350V Audio Transistor, NPN
|
ON Semiconductor ONSEMI
|
2N5655 2N5656 2N5657 |
Power 1A 350V NPN POWER TRANSISTORS NPN SILICON Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp. NEC[NEC]
|
NESG3031M14NBSP NESG3031M14-T3 NESG3031M14 |
From old datasheet system NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC[NEC]
|
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V
|
Fairchild Semiconductor
|
IRF323 IRF320 |
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
|
RFM4N35 RFP4N35 RFM4N40 RFP4N40 |
4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs 4A 350V and 400V 2.000 Ohm N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
SK100DAL100D SK100DB100D |
NPN POWER DARLUNGTON MODULES 100A 1000V 100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR NPN Power Darlington Modules
|
Semikron International
|
2N6517 |
TRANSISTOR,BJT,NPN,350V V(BR)CEO,500MA I(C),TO-92 From old datasheet system
|
ON Semiconductor
|
BUL146FG BUL146G |
Bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB SWITCHMODE NPN Bipolar Power Transistor
|
ON Semiconductor
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|